High Reliability Power MOSFETs for Space Applications

We have developed highly reliable and radiation-hardened power MOSFETs for use in outer space applications in satellites and space stations. The largest difference between these newly developed Rad-Hard Power MOSFETs and general-use MOSFETs is that they have excellent durability against high energy charged particles and ionizing radiation. To provide increased durability, electrical characteristics had been sacrificed in the past. With this device, however, to provide durability against high energy charged particles, a drift diffusion model was modified so as to enable simulation of the mechanism. A power MOSFET designed for use in outer space applications and having the world’s top level performance is realized by providing a thick epitaxial layer with low specific resistance as a countermeasure to ensure durability against SEB (single event burn-out).